CS1N70A3H-G. Аналоги и основные параметры
Наименование производителя: CS1N70A3H-G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5.9 ns
Cossⓘ - Выходная емкость: 9 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 16 Ohm
Тип корпуса: TO-251
Аналог (замена) для CS1N70A3H-G
- подборⓘ MOSFET транзистора по параметрам
CS1N70A3H-G даташит
cs1n70a3h-g.pdf
Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
jcs1n70tc.pdf
N R N-CHANNEL MOSFET JCS1N70TC Package MAIN CHARACTERISTICS ID 1A VDSS 700 V Rdson 18 @Vgs=10V Qg 4.41nC APPLICATIONS High frequency switching mode power supply Electronic ballast Power factor correction
cs1n70 a3h-g.pdf
Silicon N-Channel Power MOSFET R CS1N70 A3H-G General Description VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs1n70su cs1n70sf.pdf
nvert CS1N70SU, CS1N70SF Suzhou Convert Semiconductor Co ., Ltd. 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS1N70SU TO-251 CS1N70SU CS
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