CS220N03MD Todos los transistores

 

CS220N03MD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS220N03MD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SO-8
 
   - Selección ⓘ de transistores por parámetros

 

CS220N03MD Datasheet (PDF)

 ..1. Size:118K  china
 cs220n03md.pdf pdf_icon

CS220N03MD

LJ2015-55CS220N03MD N T =25 1.13AT =25 0.83AP WtotT =25 2AT =25 1.4AI V =10V,T =25 6 AD GS AI V =10V,T =90 4.4 AD GS AI T =25, 54 AD AV 20 VGST +150

 7.1. Size:355K  crhj
 cs220n04 a8h.pdf pdf_icon

CS220N03MD

Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.2. Size:579K  wuxi china
 cs220n04a8h.pdf pdf_icon

CS220N03MD

Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Otros transistores... CS20N50ANH , CS20N60 , CS20N60A8H , CS20N60ANH , CS20N60FA9H , CS20N65FA9H , CS20N90ANRD , CS2110K1 , IRF1404 , CS220N04A8H , CS2232 , CS2308 , CS240 , CS24N40A8 , CS24N50 , CS250 , CS27P06 .

History: IRFS351 | PPJD50N10AL

 

 
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