All MOSFET. CS220N03MD Datasheet

 

CS220N03MD Datasheet and Replacement


   Type Designator: CS220N03MD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO-8
 

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CS220N03MD Datasheet (PDF)

 ..1. Size:118K  china
 cs220n03md.pdf pdf_icon

CS220N03MD

LJ2015-55CS220N03MD N T =25 1.13AT =25 0.83AP WtotT =25 2AT =25 1.4AI V =10V,T =25 6 AD GS AI V =10V,T =90 4.4 AD GS AI T =25, 54 AD AV 20 VGST +150

 7.1. Size:355K  crhj
 cs220n04 a8h.pdf pdf_icon

CS220N03MD

Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.2. Size:579K  wuxi china
 cs220n04a8h.pdf pdf_icon

CS220N03MD

Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: CS20N50ANH , CS20N60 , CS20N60A8H , CS20N60ANH , CS20N60FA9H , CS20N65FA9H , CS20N90ANRD , CS2110K1 , IRF1404 , CS220N04A8H , CS2232 , CS2308 , CS240 , CS24N40A8 , CS24N50 , CS250 , CS27P06 .

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