CS220N04A8H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS220N04A8H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 333 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 220 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 145 nS

Cossⓘ - Capacitancia de salida: 1400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-220AB

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CS220N04A8H datasheet

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 cs220n04a8h.pdf pdf_icon

CS220N04A8H

Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25 ) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.1. Size:355K  crhj
 cs220n04 a8h.pdf pdf_icon

CS220N04A8H

Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25 ) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.1. Size:118K  china
 cs220n03md.pdf pdf_icon

CS220N04A8H

Otros transistores... CS20N60, CS20N60A8H, CS20N60ANH, CS20N60FA9H, CS20N65FA9H, CS20N90ANRD, CS2110K1, CS220N03MD, IRLZ44N, CS2232, CS2308, CS240, CS24N40A8, CS24N50, CS250, CS27P06, CS2807