CS220N04A8H Specs and Replacement
Type Designator: CS220N04A8H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 1400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220AB
CS220N04A8H substitution
- MOSFET ⓘ Cross-Reference Search
CS220N04A8H datasheet
cs220n04a8h.pdf
Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25 ) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
cs220n04 a8h.pdf
Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25 ) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
Detailed specifications: CS20N60, CS20N60A8H, CS20N60ANH, CS20N60FA9H, CS20N65FA9H, CS20N90ANRD, CS2110K1, CS220N03MD, IRLZ44N, CS2232, CS2308, CS240, CS24N40A8, CS24N50, CS250, CS27P06, CS2807
Keywords - CS220N04A8H MOSFET specs
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