CS220N04A8H Datasheet and Replacement
Type Designator: CS220N04A8H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 1400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220AB
CS220N04A8H substitution
CS220N04A8H Datasheet (PDF)
cs220n04a8h.pdf
Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs220n04 a8h.pdf
Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs220n03md.pdf
LJ2015-55CS220N03MD N T =25 1.13AT =25 0.83AP WtotT =25 2AT =25 1.4AI V =10V,T =25 6 AD GS AI V =10V,T =90 4.4 AD GS AI T =25, 54 AD AV 20 VGST +150
Datasheet: CS20N60 , CS20N60A8H , CS20N60ANH , CS20N60FA9H , CS20N65FA9H , CS20N90ANRD , CS2110K1 , CS220N03MD , IRFP260N , CS2232 , CS2308 , CS240 , CS24N40A8 , CS24N50 , CS250 , CS27P06 , CS2807 .
History: IRFS4620 | SWF18N60D | IRFB11N50APBF | RF1S30P06 | SWF20N70K
Keywords - CS220N04A8H MOSFET datasheet
CS220N04A8H cross reference
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History: IRFS4620 | SWF18N60D | IRFB11N50APBF | RF1S30P06 | SWF20N70K
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