CS220N04A8H MOSFET. Datasheet pdf. Equivalent

   Type Designator: CS220N04A8H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 138 nC
   trⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220AB

CS220N04A8H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS220N04A8H Datasheet (PDF)

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cs220n04a8h.pdf

Silicon N-Channel Power MOSFET R CS220N04 A8H General Description VDSS 40 V CS220N04 A8H, the silicon N-channel Enhanced ID 220 A PD(TC=25) 333 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.2 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

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cs220n04 a8h.pdf