NDS0605 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDS0605  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: SOT23

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NDS0605 datasheet

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 nds0605.pdf pdf_icon

NDS0605

July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchild s proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be

 9.1. Size:140K  fairchild semi
 nds0610.pdf pdf_icon

NDS0605

July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim

 9.2. Size:213K  onsemi
 nds0610.pdf pdf_icon

NDS0605

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Otros transistores... NDP7052, NDP7052L, NDP7060, NDP7060L, NDP7061, NDP7061L, NDP708A, NDP710A, 18N50, NDS0610, NDS332P, NDS351AN, NDS352AP, NDS355AN, NDS356AP, NDS7002A, NDS8410A