NDS0605 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDS0605
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET NDS0605

NDS0605 Datasheet (PDF)

..1. Size:161K fairchild semi
nds0605.pdf

July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchilds proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be

9.1. Size:140K fairchild semi
nds0610.pdf

July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim

9.2. Size:213K onsemi
nds0610.pdf

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Otros transistores... NDP7052 , NDP7052L , NDP7060 , NDP7060L , NDP7061 , NDP7061L , NDP708A , NDP710A , SKD502T , NDS0610 , NDS332P , NDS351AN , NDS352AP , NDS355AN , NDS356AP , NDS7002A , NDS8410A .

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