NDS0605 datasheet, аналоги, основные параметры

Наименование производителя: NDS0605  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.36 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm

Тип корпуса: SOT23

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Аналог (замена) для NDS0605

- подборⓘ MOSFET транзистора по параметрам

 

NDS0605 даташит

 ..1. Size:161K  fairchild semi
 nds0605.pdf pdf_icon

NDS0605

July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchild s proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be

 9.1. Size:140K  fairchild semi
 nds0610.pdf pdf_icon

NDS0605

July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim

 9.2. Size:213K  onsemi
 nds0610.pdf pdf_icon

NDS0605

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