NDS0605 Datasheet and Replacement
Type Designator: NDS0605
Marking Code: 605_65D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 0.18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.8 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT23
NDS0605 substitution
NDS0605 Datasheet (PDF)
nds0605.pdf
July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchilds proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be
nds0610.pdf
July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim
nds0610.pdf
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