NDS0605 Datasheet. Specs and Replacement

Type Designator: NDS0605  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: SOT23

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NDS0605 datasheet

 ..1. Size:161K  fairchild semi
 nds0605.pdf pdf_icon

NDS0605

July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchild s proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be... See More ⇒

 9.1. Size:140K  fairchild semi
 nds0610.pdf pdf_icon

NDS0605

July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim... See More ⇒

 9.2. Size:213K  onsemi
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NDS0605

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth... See More ⇒

Detailed specifications: NDP7052, NDP7052L, NDP7060, NDP7060L, NDP7061, NDP7061L, NDP708A, NDP710A, 18N50, NDS0610, NDS332P, NDS351AN, NDS352AP, NDS355AN, NDS356AP, NDS7002A, NDS8410A

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