CS3N60A3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS3N60A3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V

Qgⓘ - Carga de la puerta: 11 nC

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.2 Ohm

Encapsulados: TO-251

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CS3N60A3 datasheet

 ..1. Size:342K  wuxi china
 cs3n60a3.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 8.1. Size:342K  crhj
 cs3n60 a3.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.1. Size:345K  crhj
 cs3n65 a4h-g.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.2. Size:345K  wuxi china
 cs3n65a4h-g.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

MOSTRAR MÁS

Otros transistores... CS3710, CS3710B8, CS37N5, CS38N20D, CS38N30AN, CS3912, CS3N50B3HY, CS3N50B4HY, IRFP250, CS3N65A4H-G, CS3N70A3H-G, CS3N80A3, CS3N80A4, CS3N80A8, CS3N80FA9, CS3N90A3H, CS3N90A4H