Справочник MOSFET. CS3N60A3

 

CS3N60A3 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS3N60A3
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 38 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.2 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для CS3N60A3

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS3N60A3 Datasheet (PDF)

 ..1. Size:342K  wuxi china
 cs3n60a3.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 8.1. Size:342K  crhj
 cs3n60 a3.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.1. Size:345K  crhj
 cs3n65 a4h-g.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.2. Size:345K  wuxi china
 cs3n65a4h-g.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CS3710 , CS3710B8 , CS37N5 , CS38N20D , CS38N30AN , CS3912 , CS3N50B3HY , CS3N50B4HY , STF13NM60N , CS3N65A4H-G , CS3N70A3H-G , CS3N80A3 , CS3N80A4 , CS3N80A8 , CS3N80FA9 , CS3N90A3H , CS3N90A4H .

 

 
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