Справочник MOSFET. CS3N60A3

 

CS3N60A3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS3N60A3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 38 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.2 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для CS3N60A3

 

 

CS3N60A3 Datasheet (PDF)

 ..1. Size:342K  wuxi china
 cs3n60a3.pdf

CS3N60A3 CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 8.1. Size:342K  crhj
 cs3n60 a3.pdf

CS3N60A3 CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.1. Size:345K  crhj
 cs3n65 a4h-g.pdf

CS3N60A3 CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.2. Size:345K  wuxi china
 cs3n65a4h-g.pdf

CS3N60A3 CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.3. Size:434K  convert
 cs3n65f cs3n65p cs3n65u cs3n65d.pdf

CS3N60A3 CS3N60A3

nvertCS3N65F,CS3N65P,CS3N65U,CS3N65DSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N65F TO-220F

 9.4. Size:428K  convert
 cs3n65lf 3n65lu.pdf

CS3N60A3 CS3N60A3

nvertCS3N65LF,3N65LUSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N65LF TO-220F CS3N65LFCS3N

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