All MOSFET. CS3N60A3 Datasheet

 

CS3N60A3 Datasheet and Replacement


   Type Designator: CS3N60A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO-251
 

 CS3N60A3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CS3N60A3 Datasheet (PDF)

 ..1. Size:342K  wuxi china
 cs3n60a3.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 8.1. Size:342K  crhj
 cs3n60 a3.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.1. Size:345K  crhj
 cs3n65 a4h-g.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.2. Size:345K  wuxi china
 cs3n65a4h-g.pdf pdf_icon

CS3N60A3

Silicon N-Channel Power MOSFET R CS3N65 A4H-G General Description VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

SHOW MORE

Datasheet: CS3710 , CS3710B8 , CS37N5 , CS38N20D , CS38N30AN , CS3912 , CS3N50B3HY , CS3N50B4HY , STF13NM60N , CS3N65A4H-G , CS3N70A3H-G , CS3N80A3 , CS3N80A4 , CS3N80A8 , CS3N80FA9 , CS3N90A3H , CS3N90A4H .

Keywords - CS3N60A3 MOSFET datasheet

 CS3N60A3 cross reference
 CS3N60A3 equivalent finder
 CS3N60A3 lookup
 CS3N60A3 substitution
 CS3N60A3 replacement

 

 
Back to Top

 


 
.