CS48N18 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS48N18

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 231 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 158 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 967 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO-220

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CS48N18 datasheet

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CS48N18

CS48N18 Pb CS48N18 Pb Free Plating Product 70V,158A N-Channel Trench Process Power MOSFET General Description CS48N18 The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink) designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea

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CS48N18

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 cs48n78.pdf pdf_icon

CS48N18

CS48N78 Pb CS48N78 Pb Free Plating Product 70V,80A N-Channel Trench Process Power MOSFET General Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

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 cs48n75.pdf pdf_icon

CS48N18

CS48N75 Pb CS48N75 Pb Free Plating Product 70V,68A N-Channel Trench Process Power MOSFET General Description The is N-channel MOS Field Effect Transistor CS48N75 designed for high current switching applications. Rugged EAS CS48N75 (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

MOSTRAR MÁS

Otros transistores... CS3N90A8, CS3N90FA9H, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY, CS4486, CS47N60, 75N75, CS48N75, CS48N78, CS48N80, CS48N88, CS4905S, CS4J60A3-G, CS4J60B3-G, CS4N60