CS48N18 Specs and Replacement
Type Designator: CS48N18
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 158 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 967 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO-220
CS48N18 substitution
- MOSFET ⓘ Cross-Reference Search
CS48N18 datasheet
cs48n18.pdf
CS48N18 Pb CS48N18 Pb Free Plating Product 70V,158A N-Channel Trench Process Power MOSFET General Description CS48N18 The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink) designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea... See More ⇒
cs48n78.pdf
CS48N78 Pb CS48N78 Pb Free Plating Product 70V,80A N-Channel Trench Process Power MOSFET General Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D... See More ⇒
cs48n75.pdf
CS48N75 Pb CS48N75 Pb Free Plating Product 70V,68A N-Channel Trench Process Power MOSFET General Description The is N-channel MOS Field Effect Transistor CS48N75 designed for high current switching applications. Rugged EAS CS48N75 (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS... See More ⇒
Detailed specifications: CS3N90A8, CS3N90FA9H, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY, CS4486, CS47N60, 75N75, CS48N75, CS48N78, CS48N80, CS48N88, CS4905S, CS4J60A3-G, CS4J60B3-G, CS4N60
Keywords - CS48N18 MOSFET specs
CS48N18 cross reference
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