Справочник MOSFET. CS48N18

 

CS48N18 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS48N18
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 231 W
   Предельно допустимое напряжение сток-исток |Uds|: 70 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 158 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 150 nC
   Время нарастания (tr): 28 ns
   Выходная емкость (Cd): 967 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0042 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для CS48N18

 

 

CS48N18 Datasheet (PDF)

 ..1. Size:781K  thinkisemi
cs48n18.pdf

CS48N18
CS48N18

CS48N18 PbCS48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description CS48N18The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea

 9.1. Size:748K  thinkisemi
cs48n80.pdf

CS48N18
CS48N18

CS48N80 PbCS48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS CS48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

 9.2. Size:751K  thinkisemi
cs48n78.pdf

CS48N18
CS48N18

CS48N78 PbCS48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

 9.3. Size:998K  thinkisemi
cs48n75.pdf

CS48N18
CS48N18

CS48N75 PbCS48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor CS48N75designed for high current switching applications. Rugged EAS CS48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

 9.4. Size:754K  thinkisemi
cs48n88.pdf

CS48N18
CS48N18

CS48N88 PbCS48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The CS48N88 is N-channel MOS Field Effect Transistor CS48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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