CS4N65A4HDY Todos los transistores

 

CS4N65A4HDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS4N65A4HDY

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 85 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 14.5 nC

Tiempo de elevación (tr): 6.5 nS

Conductancia de drenaje-sustrato (Cd): 55 pF

Resistencia drenaje-fuente RDS(on): 2.5 Ohm

Empaquetado / Estuche: TO-252

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CS4N65A4HDY Datasheet (PDF)

1.1. cs4n65a4hdy.pdf Size:596K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description: VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

2.1. cs4n65a4tdy.pdf Size:353K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description: VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 3.1. cs4n65a3hdy.pdf Size:353K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description: VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.2. cs4n65a8hd.pdf Size:345K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description: VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 3.3. cs4n65a3tdy.pdf Size:237K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description: VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

3.4. cs4n65a3hd.pdf Size:354K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description: VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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