CS4N65A4HDY MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4N65A4HDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 85 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 14.5 nC
Rise Time (tr): 6.5 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO-252
CS4N65A4HDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4N65A4HDY Datasheet (PDF)
1.1. cs4n65a4hdy.pdf 
Size:596K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description： VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
2.1. cs4n65a4tdy.pdf Size:353K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description： VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
3.1. cs4n65a3hdy.pdf Size:353K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description： VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
3.2. cs4n65a8hd.pdf Size:345K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description： VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
3.3. cs4n65a3tdy.pdf Size:237K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description： VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
3.4. cs4n65a3hd.pdf Size:354K _update_mosfet
Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description： VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
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