All MOSFET. CS4N65A4HDY Datasheet

 

CS4N65A4HDY MOSFET. Datasheet pdf. Equivalent

Type Designator: CS4N65A4HDY

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14.5 nC

Rise Time (tr): 6.5 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO-252

CS4N65A4HDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS4N65A4HDY Datasheet (PDF)

1.1. cs4n65a4hdy.pdf Size:596K _update_mosfet

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description： VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

2.1. cs4n65a4tdy.pdf Size:353K _update_mosfet

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description： VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 3.1. cs4n65a3hdy.pdf Size:353K _update_mosfet

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description： VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.2. cs4n65a3tdy.pdf Size:237K _update_mosfet

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description： VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 3.3. cs4n65a8hd.pdf Size:345K _update_mosfet

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description： VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.4. cs4n65a3hd.pdf Size:354K _update_mosfet

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description： VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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