Справочник MOSFET. CS4N65A4HDY

 

CS4N65A4HDY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS4N65A4HDY
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14.5 nC
   trⓘ - Время нарастания: 6.5 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для CS4N65A4HDY

 

 

CS4N65A4HDY Datasheet (PDF)

 ..1. Size:596K  wuxi china
 cs4n65a4hdy.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A4HDY General Description VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.1. Size:353K  wuxi china
 cs4n65a4tdy.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A4TDY General Description VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.2. Size:226K  wuxi china
 cs4n65a4r.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A4R General Description VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.1. Size:677K  blue-rocket-elect
 brcs4n65aa.pdf

CS4N65A4HDY CS4N65A4HDY

BRCS4N65AA Rev.D Nov.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

 7.2. Size:231K  wuxi china
 cs4n65a3hd.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.3. Size:353K  wuxi china
 cs4n65a3hdy.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.4. Size:220K  wuxi china
 cs4n65a3r.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.5. Size:226K  wuxi china
 cs4n65a8hd.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A8HD 0General Description VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.6. Size:324K  wuxi china
 cs4n65a3hd1-g.pdf

CS4N65A4HDY CS4N65A4HDY

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto

 7.7. Size:237K  wuxi china
 cs4n65a3tdy.pdf

CS4N65A4HDY CS4N65A4HDY

Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMK119N12LG4

 

 
Back to Top