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CS4N65A4HDY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CS4N65A4HDY

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 85 W

Предельно допустимое напряжение сток-исток (Uds): 650 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 4 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 14.5 nC

Время нарастания (tr): 6.5 ns

Выходная емкость (Cd): 55 pf

Сопротивление сток-исток открытого транзистора (Rds): 2.5 Ohm

Тип корпуса: TO-252

Аналог (замена) для CS4N65A4HDY

 

CS4N65A4HDY Datasheet (PDF)

1.1. cs4n65a4hdy.pdf Size:596K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description: VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

2.1. cs4n65a4tdy.pdf Size:353K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description: VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 3.1. cs4n65a3hdy.pdf Size:353K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description: VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.2. cs4n65a8hd.pdf Size:345K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description: VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 3.3. cs4n65a3tdy.pdf Size:237K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description: VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

3.4. cs4n65a3hd.pdf Size:354K _update_mosfet

CS4N65A4HDY
CS4N65A4HDY

Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description: VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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Список транзисторов

Обновления

MOSFET: SPA07N60C2 | SPB07N60C2 | SPP07N60C2 | SI2300A | NTD4809NHG | NTD4809NH | IPU09N03LA | IPS09N03LA | IPF09N03LA | IPD09N03LA | BSC0906NS | 2SK0123 | 2SJ455 | R9522 | R9521 |
 

 

 

 

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