CS4N70FA9D Todos los transistores

 

CS4N70FA9D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS4N70FA9D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO-220F
 

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CS4N70FA9D Datasheet (PDF)

 ..1. Size:930K  wuxi china
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CS4N70FA9D

Silicon N-Channel Power MOSFET R CS4N70F A9D General Description VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 5.1. Size:321K  wuxi china
cs4n70fa9r.pdf pdf_icon

CS4N70FA9D

Silicon N-Channel Power MOSFET R CS4N70F A9R General Description VDSS 700 V CS4N70F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.55 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:2205K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70s jcs4n70b jcs4n70c jcs4n70f.pdf pdf_icon

CS4N70FA9D

N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA

 7.2. Size:2742K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70c jcs4n70f jcs4n70b jcs4n70s.pdf pdf_icon

CS4N70FA9D

N RN-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

Otros transistores... CS4N65A3HD , CS4N65A3HDY , CS4N65A3TDY , CS4N65A4HDY , CS4N65A4TDY , CS4N65A8HD , CS4N65F , CS4N70ARHD , 20N60 , CS50N06 , CS50N06D , CS50N80 , CS5103 , CS520 , CS5210 , CS5210PBF , CS530 .

History: STL80N3LLH6 | BUK962R8-30B

 

 
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