All MOSFET. CS4N70FA9D Datasheet

 

CS4N70FA9D MOSFET. Datasheet pdf. Equivalent

Type Designator: CS4N70FA9D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm

Package: TO-220F

CS4N70FA9D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS4N70FA9D Datasheet (PDF)

1.1. cs4n70fa9d.pdf Size:930K _update_mosfet

CS4N70FA9D
CS4N70FA9D

Silicon N-Channel Power MOSFET R ○ CS4N70F A9D General Description: VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

3.1. cs4n70f a9d.pdf Size:930K _crhj

CS4N70FA9D
CS4N70FA9D

Silicon N-Channel Power MOSFET R ○ CS4N70F A9D General Description: VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 4.1. cs4n70arhd.pdf Size:930K _update_mosfet

CS4N70FA9D
CS4N70FA9D

Silicon N-Channel Power MOSFET R ○ CS4N70 ARHD General Description: VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.2. cs4n70 arhd.pdf Size:930K _crhj

CS4N70FA9D
CS4N70FA9D

Silicon N-Channel Power MOSFET R ○ CS4N70 ARHD General Description: VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 4.3. cs4n70 a4hd.pdf Size:428K _crhj

CS4N70FA9D
CS4N70FA9D

Silicon N-Channel Power MOSFET R ○ CS4N70 A4HD General Description: VDSS 700 V CS4N70 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.4. cs4n70 a3d.pdf Size:427K _crhj

CS4N70FA9D
CS4N70FA9D

Silicon N-Channel Power MOSFET R ○ CS4N70 A3D General Description: VDSS 700 V CS4N70 A3D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 4.5. cs4n70 a3hd-g.pdf Size:432K _crhj

CS4N70FA9D
CS4N70FA9D

Silicon N-Channel Power MOSFET R ○ CS4N70 A3HD-G General Description: VDSS 700 V CS4N70 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Datasheet: PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , IRF510 , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT , PHD96NQ03LT , PHD98N03LT , PHN210 .

 
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