NDS7002A Todos los transistores

 

NDS7002A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS7002A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT23

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NDS7002A Datasheet (PDF)

 ..1. Size:109K  fairchild semi
2n7000 2n7002 nds7002a.pdf

NDS7002A
NDS7002A

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged

 ..2. Size:736K  onsemi
2n7000 2n7002 nds7002a.pdf

NDS7002A
NDS7002A

2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect TransistorDescriptionFeaturesThese N-channel enhancement mode field effect transis- High Density Cell Design for Low RDS(ON)tors are produced using ON Semiconductor's Voltage Controlled Small Signal Switchproprietary, high cell density, DMOS technology. These Rugged and Reliableproducts have been de

Otros transistores... NDP710A , NDS0605 , NDS0610 , NDS332P , NDS351AN , NDS352AP , NDS355AN , NDS356AP , 2N60 , NDS8410A , NDS8425 , NDS8426A , NDS8434A , NDS8435A , NDS8926 , NDS8934 , NDS8936 .

 

 
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