NDS7002A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDS7002A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: SOT23

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NDS7002A datasheet

 ..1. Size:109K  fairchild semi
 2n7000 2n7002 nds7002a.pdf pdf_icon

NDS7002A

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged

 ..2. Size:736K  onsemi
 2n7000 2n7002 nds7002a.pdf pdf_icon

NDS7002A

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Description Features These N-channel enhancement mode field effect transis- High Density Cell Design for Low RDS(ON) tors are produced using ON Semiconductor's Voltage Controlled Small Signal Switch proprietary, high cell density, DMOS technology. These Rugged and Reliable products have been de

Otros transistores... NDP710A, NDS0605, NDS0610, NDS332P, NDS351AN, NDS352AP, NDS355AN, NDS356AP, HY1906P, NDS8410A, NDS8425, NDS8426A, NDS8434A, NDS8435A, NDS8926, NDS8934, NDS8936