NDS7002A
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDS7002A
Marking Code: 712
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
SOT23
NDS7002A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDS7002A
Datasheet (PDF)
..1. Size:109K fairchild semi
2n7000 2n7002 nds7002a.pdf
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged
..2. Size:736K onsemi
2n7000 2n7002 nds7002a.pdf
2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect TransistorDescriptionFeaturesThese N-channel enhancement mode field effect transis- High Density Cell Design for Low RDS(ON)tors are produced using ON Semiconductor's Voltage Controlled Small Signal Switchproprietary, high cell density, DMOS technology. These Rugged and Reliableproducts have been de
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