NDS7002A Datasheet and Replacement
Type Designator: NDS7002A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT23
NDS7002A substitution
NDS7002A Datasheet (PDF)
2n7000 2n7002 nds7002a.pdf

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged
2n7000 2n7002 nds7002a.pdf

2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect TransistorDescriptionFeaturesThese N-channel enhancement mode field effect transis- High Density Cell Design for Low RDS(ON)tors are produced using ON Semiconductor's Voltage Controlled Small Signal Switchproprietary, high cell density, DMOS technology. These Rugged and Reliableproducts have been de
Datasheet: NDP710A , NDS0605 , NDS0610 , NDS332P , NDS351AN , NDS352AP , NDS355AN , NDS356AP , IRFZ24N , NDS8410A , NDS8425 , NDS8426A , NDS8434A , NDS8435A , NDS8926 , NDS8934 , NDS8936 .
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