NDS7002A Datasheet. Specs and Replacement
Type Designator: NDS7002A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT23
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NDS7002A datasheet
2n7000 2n7002 nds7002a.pdf
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged ... See More ⇒
2n7000 2n7002 nds7002a.pdf
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Description Features These N-channel enhancement mode field effect transis- High Density Cell Design for Low RDS(ON) tors are produced using ON Semiconductor's Voltage Controlled Small Signal Switch proprietary, high cell density, DMOS technology. These Rugged and Reliable products have been de... See More ⇒
Detailed specifications: NDP710A, NDS0605, NDS0610, NDS332P, NDS351AN, NDS352AP, NDS355AN, NDS356AP, HY1906P, NDS8410A, NDS8425, NDS8426A, NDS8434A, NDS8435A, NDS8926, NDS8934, NDS8936
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