CS5N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

CS5N90 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 5.0 A IDM 20 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.73 /W BVDSS VGS=0V,ID=0.25mA 900 V RDS on VGS=10V,ID=2.5A 1.7 3.8 VGS th VDS=VGS,ID=0

Silicon N-Channel Power MOSFET R CS5N90F A9H General Description VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Silicon N-Channel Power MOSFET R CS5N90F A9H General Description VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power