CS5N90
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS5N90
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8
Ohm
Package:
TO-254
CS5N90
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS5N90
Datasheet (PDF)
..1. Size:612K crhj
cs5n90 arh-g.pdf 
Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
..2. Size:124K china
cs5n90.pdf
CS5N90 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 5.0 A IDM 20 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.73 /W BVDSS VGS=0V,ID=0.25mA 900 V RDS on VGS=10V,ID=2.5A 1.7 3.8 VGS th VDS=VGS,ID=0
0.1. Size:424K crhj
cs5n90f a9h.pdf
Silicon N-Channel Power MOSFET R CS5N90F A9H General Description VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
0.2. Size:609K wuxi china
cs5n90arh-g.pdf
Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
0.3. Size:424K wuxi china
cs5n90fa9h.pdf
Silicon N-Channel Power MOSFET R CS5N90F A9H General Description VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
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