CS5N90FA9H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS5N90FA9H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220F

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CS5N90FA9H datasheet

 ..1. Size:424K  wuxi china
 cs5n90fa9h.pdf pdf_icon

CS5N90FA9H

Silicon N-Channel Power MOSFET R CS5N90F A9H General Description VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25 ) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:424K  crhj
 cs5n90f a9h.pdf pdf_icon

CS5N90FA9H

Silicon N-Channel Power MOSFET R CS5N90F A9H General Description VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25 ) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:612K  crhj
 cs5n90 arh-g.pdf pdf_icon

CS5N90FA9H

Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.2. Size:124K  china
 cs5n90.pdf pdf_icon

CS5N90FA9H

CS5N90 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 5.0 A IDM 20 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.73 /W BVDSS VGS=0V,ID=0.25mA 900 V RDS on VGS=10V,ID=2.5A 1.7 3.8 VGS th VDS=VGS,ID=0

MOSTRAR MÁS

Otros transistores... CS5N65A4, CS5N65A7H, CS5N65A8H, CS5N65FA9H, CS5N70A4, CS5N70FA9, CS5N90, CS5N90ARH-G, AO3401, CS5NB90, CS5NJ5305, CS5NJ540, CS5NJ540A, CS5NJ9540, CS5NJZ48, CS5NM50, CS5Y3205