All MOSFET. CS5N90FA9H Datasheet

 

CS5N90FA9H MOSFET. Datasheet pdf. Equivalent

Type Designator: CS5N90FA9H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO-220F

CS5N90FA9H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS5N90FA9H Datasheet (PDF)

1.1. cs5n90fa9h.pdf Size:424K _update_mosfet

CS5N90FA9H
CS5N90FA9H

Silicon N-Channel Power MOSFET R ○ CS5N90F A9H General Description: VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25℃) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.1. cs5n90f a9h.pdf Size:424K _crhj

CS5N90FA9H
CS5N90FA9H

Silicon N-Channel Power MOSFET R ○ CS5N90F A9H General Description: VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25℃) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.1. cs5n90arh-g.pdf Size:609K _update_mosfet

CS5N90FA9H
CS5N90FA9H

Silicon N-Channel Power MOSFET R ○ CS5N90 ARH-G General Description: VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

4.2. cs5n90.pdf Size:124K _update_mosfet

CS5N90FA9H

CS5N90 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 150 W 线性降低系数 1.2 W/℃ ID (VGS=10V,TC=25℃) 5.0 A 极 限 IDM 20 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.73 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 900 V RDS on) VGS=10V,ID=2.5A 1.7 3.8 Ω ( VGS th) VDS=VGS,ID=0

 4.3. cs5n90 arh-g.pdf Size:612K _crhj

CS5N90FA9H
CS5N90FA9H

Silicon N-Channel Power MOSFET R ○ CS5N90 ARH-G General Description: VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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