CS630F Todos los transistores

 ..1. Size:712K  crhj
 cs630f a9h.pdf

Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced ID 9 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..2. Size:228K  lzg
 cs630f.pdf

 0.1. Size:2285K  jilin sino
 jcs630va jcs630ra jcs630va jcs630ba jcs630sa jcs630fa jcs630ca.pdf

N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 0.2. Size:1941K  jilin sino
 jcs630va jcs630ra jcs630ba jcs630sa jcs630ca jcs630fa.pdf

N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 0.3. Size:1651K  blue-rocket-elect
 brcs630fa.pdf

BRCS630FA Rev.A Sep.-2023 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features V =200V I =9A DS D R DS(on)@10V 0.4 (Type.0.35 ) HF Product. / Applications LED Networking,Load Switch,LED applications.

 0.4. Size:832K  wuxi china
 cs630fa9h.pdf

Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25 ) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power