CS630F Specs and Replacement
Type Designator: CS630F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220F
CS630F substitution
- MOSFET ⓘ Cross-Reference Search
CS630F datasheet
cs630f a9h.pdf
Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced ID 9 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
jcs630va jcs630ra jcs630va jcs630ba jcs630sa jcs630fa jcs630ca.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
jcs630va jcs630ra jcs630ba jcs630sa jcs630ca jcs630fa.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
Detailed specifications: CS5Y9540CM, CS60N04A4, CS6215PBF, CS630, CS630A3H, CS630A4H, CS630A8H, CS630D, STP80NF70, CS630FA9H, CS634F, CS640, CS640A0H, CS640A8H, CS640F, CS640FA9H, CS64N90
Keywords - CS630F MOSFET specs
CS630F cross reference
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