CS840A8H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS840A8H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 110 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de CS840A8H MOSFET
CS840A8H Datasheet (PDF)
cs840a8h.pdf

Silicon N-Channel Power MOSFET R CS840 A8H General Description VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs840a8d.pdf

Silicon N-Channel Power MOSFET R CS840 A8D General Description VDSS 500 V CS840 A8D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.68 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs840f a9h.pdf

Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs840 a8h.pdf

Silicon N-Channel Power MOSFET R CS840 A8H General Description VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Otros transistores... CS830 , CS830A3RD , CS830A4RD , CS830A8RD , CS830F , CS830FA9RD , CS840 , CS840A8D , 8205A , CS840F , CS840FA9D , CS840FA9H , CS8473 , CS8N25A4H , CS8N25A8H , CS8N60A8H , CS8N60F .
History: CS840FA9H | STB8NM60N | IRFI740G | CS8N25A4H | PHP44N06LT | WM05N03M | STM8309
History: CS840FA9H | STB8NM60N | IRFI740G | CS8N25A4H | PHP44N06LT | WM05N03M | STM8309



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