CS840A8H MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

CS840A8H Specs and Replacement

Type Designator: CS840A8H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220AB

CS840A8H substitution

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CS840A8H datasheet

..1. Size:348K wuxi china
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Silicon N-Channel Power MOSFET R CS840 A8H General Description VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25 ) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

7.1. Size:519K wuxi china
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Silicon N-Channel Power MOSFET R CS840 A8D General Description VDSS 500 V CS840 A8D, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.68 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

9.1. Size:346K crhj
cs840f a9h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

9.2. Size:348K crhj
cs840 a8h.pdf pdf_icon