CS840A8H - параметры транзистора MOSFET, его аналоги, datasheet

CS840A8H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: CS840A8H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28 nC
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO-220AB

Аналог (замена) для CS840A8H

CS840A8H Datasheet (PDF)

..1. Size:348K wuxi china
cs840a8h.pdf

Silicon N-Channel Power MOSFET R CS840 A8H General Description VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

7.1. Size:519K wuxi china
cs840a8d.pdf

Silicon N-Channel Power MOSFET R CS840 A8D General Description VDSS 500 V CS840 A8D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.68 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

9.1. Size:346K crhj
cs840f a9h.pdf

Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

9.2. Size:348K crhj
cs840 a8h.pdf

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cs840 a8d.pdf

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cs840f a9d.pdf

Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

9.5. Size:182K foshan
cs840.pdf

IRF840(CS840) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

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cs840f.pdf

IRFS840(CS840F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

9.7. Size:519K wuxi china
cs840fa9d.pdf