CSD16323Q3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD16323Q3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 740 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: SON3.3X3.3 SUPERSO8

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CSD16323Q3 datasheet

 ..1. Size:754K  texas
 csd16323q3.pdf pdf_icon

CSD16323Q3

CSD16323Q3 www.ti.com SLPS224B AUGUST 2009 REVISED NOVEMBER 2011 N-Channel NexFET Power MOSFETs Check for Samples CSD16323Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5.4 m Avalanch

 ..2. Size:2570K  cn vbsemi
 csd16323q3.pdf pdf_icon

CSD16323Q3

CSD16323Q3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control I

 7.1. Size:802K  texas
 csd16325q5.pdf pdf_icon

CSD16323Q3

CSD16325Q5 www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16325Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3.5 nC Avalanche Rated VGS = 3V 2.1

 7.2. Size:1195K  texas
 csd16327q3.pdf pdf_icon

CSD16323Q3

CSD16327Q3 www.ti.com SLPS371 DECEMBER 2011 N-Channel NexFET Power MOSFET Check for Samples CSD16327Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5 m Avalanche Rated RDS(on) Drain to

MOSTRAR MÁS

Otros transistores... CSD13303W1015, CSD13306W, CSD13381F4, CSD13383F4, CSD15571Q2, CSD16301Q2, CSD16321Q5, CSD16322Q5, IRFP260N, CSD16325Q5, CSD16327Q3, CSD16340Q3, CSD16342Q5A, CSD16401Q5, CSD16403Q5A, CSD16404Q5A, CSD16406Q3