CSD16323Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD16323Q3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 21 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
Carga de la puerta (Qg): 6.2 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 740 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: SON3.3X3.3 SUPERSO8
Búsqueda de reemplazo de MOSFET CSD16323Q3
CSD16323Q3 Datasheet (PDF)
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csd16321q5.pdf
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csd16322q5.pdf
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