CSD16323Q3 PDF and Equivalents Search

 ..1. Size:754K  texas
 csd16323q3.pdf

CSD16323Q3 www.ti.com SLPS224B AUGUST 2009 REVISED NOVEMBER 2011 N-Channel NexFET Power MOSFETs Check for Samples CSD16323Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5.4 m Avalanch... See More ⇒

 ..2. Size:2570K  cn vbsemi
 csd16323q3.pdf

CSD16323Q3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control I... See More ⇒

 7.1. Size:802K  texas
 csd16325q5.pdf

CSD16325Q5 www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16325Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3.5 nC Avalanche Rated VGS = 3V 2.1 ... See More ⇒

 7.2. Size:1195K  texas
 csd16327q3.pdf

CSD16327Q3 www.ti.com SLPS371 DECEMBER 2011 N-Channel NexFET Power MOSFET Check for Samples CSD16327Q3 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V Ultra Low Qg and Qgd Qg Gate Charge Total (4.5V) 6.2 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 3V 5 m Avalanche Rated RDS(on) Drain to ... See More ⇒

 7.3. Size:757K  texas
 csd16321q5.pdf

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 7.4. Size:763K  texas
 csd16322q5.pdf

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