CSD17310Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17310Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 21 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.8 V
Carga de la puerta (Qg): 8.9 nC
Tiempo de subida (tr): 11.6 nS
Conductancia de drenaje-sustrato (Cd): 630 pF
Resistencia entre drenaje y fuente RDS(on): 0.0051 Ohm
Paquete / Cubierta: SON5X6 SUPERSO8
Búsqueda de reemplazo de MOSFET CSD17310Q5A
CSD17310Q5A Datasheet (PDF)
csd17310q5a.pdf
CSD17310Q5Awww.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17310Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 8.9 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.1 nC Avalanche RatedVGS
csd17313q2q1.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17313Q2Q1SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Qualified for Automotive ApplicationsTA = 25C TYPICAL VALUE UNIT Optimized for 5-V Gate DriveVDS Drain-to-Source Voltage 30 V Ultra-Low Q
csd17311q5.pdf
CSD17311Q5www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17311Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 5.2 nC Low Thermal ResistanceVGS = 3V 2.3 m Avala
csd17313q2.pdf
CSD17313Q2www.ti.com SLPS260B MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETPRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 2.1 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 0.4 nC Low Thermal ResistanceVGS = 3V 31 m Pb FreeRDS(on) Drain to Source On Resi
csd17312q5.pdf
CSD17312Q5www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17312Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 6 nC Low Thermal ResistanceVGS = 3V 1.8 m Avalanch
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