All MOSFET. CSD17310Q5A Datasheet

 

CSD17310Q5A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSD17310Q5A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.6 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: SON5X6 SUPERSO8

 CSD17310Q5A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD17310Q5A Datasheet (PDF)

 ..1. Size:883K  texas
csd17310q5a.pdf

CSD17310Q5A
CSD17310Q5A

CSD17310Q5Awww.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17310Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 8.9 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.1 nC Avalanche RatedVGS

 7.1. Size:947K  texas
csd17313q2q1.pdf

CSD17310Q5A
CSD17310Q5A

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17313Q2Q1SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Qualified for Automotive ApplicationsTA = 25C TYPICAL VALUE UNIT Optimized for 5-V Gate DriveVDS Drain-to-Source Voltage 30 V Ultra-Low Q

 7.2. Size:896K  texas
csd17311q5.pdf

CSD17310Q5A
CSD17310Q5A

CSD17311Q5www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17311Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 5.2 nC Low Thermal ResistanceVGS = 3V 2.3 m Avala

 7.3. Size:314K  texas
csd17313q2.pdf

CSD17310Q5A
CSD17310Q5A

CSD17313Q2www.ti.com SLPS260B MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETPRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 2.1 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 0.4 nC Low Thermal ResistanceVGS = 3V 31 m Pb FreeRDS(on) Drain to Source On Resi

 7.4. Size:895K  texas
csd17312q5.pdf

CSD17310Q5A
CSD17310Q5A

CSD17312Q5www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17312Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 6 nC Low Thermal ResistanceVGS = 3V 1.8 m Avalanch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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