CSD75301W1015 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CSD75301W1015
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 1.5 nC
   trⓘ - Tiempo de subida: 1.7 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: WLP1.0X1.5

Búsqueda de reemplazo de MOSFET CSD75301W1015

CSD75301W1015 Datasheet (PDF)

..1. Size:506K ciclon
csd75301w1015.pdf

P-Channel Dual Common Source CICLON NexFET Power MOSFETs CSD75301W1015 Product Summary (Per Device) Features Dual P-ch MOSFETs VDS -20 V Common Source Configuration Qg 1.5 nCD2 G2 Qgd 0.3 nC Small Footprint 1.0 x 1.5 mm S S VGS= -1.8V 150 m Low Profile 0.65mm G1 D1 RDS(on) VGS=-2.5V 105 m Ultra Low Qg and Qgd VGS=-4

9.1. Size:1435K texas
csd75208w1015.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75208W1015SLPS512 JULY 2014CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVDS Drain-to-Source Voltage 20 V Small Footprint 1 mm 1.5 mmQ

9.2. Size:207K texas
csd75205w1015.pdf

CSD75205W1015www.ti.com SLPS222B OCTOBER 2009 REVISED OCTOBER 2010P-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVDS Drain to Source Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 1.6 nC Small Footprint 1mm 1.5mmQgd Gate Charge Gate to Drain 0.4 nCVGS = 1.8V 145 m Gate-Source Voltage Clamp

9.3. Size:333K texas
csd75211w1723.pdf

CSD75211W1723www.ti.com SLPS250A MAY 2010REVISED AUGUST 2011Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75211W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage -20 V Dual P-Ch MOSFETsQg Gate Charge Total (-4.5V) 4.5 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.9 nC Small Footprint 1.7 mm 2.3 mmVGS = -1.8V 50 m

9.4. Size:1324K texas
csd75207w15.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75207W15SLPS418A JUNE 2013 REVISED JUNE 2014CSD75207W15 Dual P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVD1D2 Drain-to-Drain Voltage 20 V Small Footprint 1.5-mm 1.5-mm

9.5. Size:145K texas
csd75204w15.pdf

CSD75204W15www.ti.com SLPS221A OCTOBER 2009REVISED OCTOBER 2010Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75204W151FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVD1D2 Drain to Drain Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 2.8 nC Small Footprint 1.5-mm 1.5-mmQgd Gate Charge Gate to Drain 0.6 nC Gate-Source

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: