CSD75301W1015 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD75301W1015

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1.7 nS

Cossⓘ - Capacitancia de salida: 67 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: WLP1.0X1.5

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CSD75301W1015 datasheet

 ..1. Size:506K  ciclon
 csd75301w1015.pdf pdf_icon

CSD75301W1015

P-Channel Dual Common Source CICLON NexFET Power MOSFETs CSD75301W1015 Product Summary (Per Device) Features Dual P-ch MOSFETs VDS -20 V Common Source Configuration Qg 1.5 nC D2 G2 Qgd 0.3 nC Small Footprint 1.0 x 1.5 mm S S VGS= -1.8V 150 m Low Profile 0.65mm G1 D1 RDS(on) VGS=-2.5V 105 m Ultra Low Qg and Qgd VGS=-4

 9.1. Size:1435K  texas
 csd75208w1015.pdf pdf_icon

CSD75301W1015

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD75208W1015 SLPS512 JULY 2014 CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Dual P-Channel MOSFETs TA = 25 C TYPICAL VALUE UNIT Common Source Configuration VDS Drain-to-Source Voltage 20 V Small Footprint 1 mm 1.5 mm Q

 9.2. Size:207K  texas
 csd75205w1015.pdf pdf_icon

CSD75301W1015

CSD75205W1015 www.ti.com SLPS222B OCTOBER 2009 REVISED OCTOBER 2010 P-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY Dual P-Ch MOSFETs VDS Drain to Source Voltage 20 V Common Source Configuration Qg Gate Charge Total (-4.5V) 1.6 nC Small Footprint 1mm 1.5mm Qgd Gate Charge Gate to Drain 0.4 nC VGS = 1.8V 145 m Gate-Source Voltage Clamp

 9.3. Size:333K  texas
 csd75211w1723.pdf pdf_icon

CSD75301W1015

CSD75211W1723 www.ti.com SLPS250A MAY 2010 REVISED AUGUST 2011 Dual P-Channel NexFET Power MOSFET Check for Samples CSD75211W1723 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage -20 V Dual P-Ch MOSFETs Qg Gate Charge Total (-4.5V) 4.5 nC Common Source Configuration Qgd Gate Charge Gate to Drain 0.9 nC Small Footprint 1.7 mm 2.3 mm VGS = -1.8V 50 m

MOSTRAR MÁS

Otros transistores... CSD25481F4, CSD25483F4, CSD25484F4, CSD75204W15, CSD75205W1015, CSD75207W15, CSD75208W1015, CSD75211W1723, IRFB3607, CSD83325L, CSD85301Q2, CSD85312Q3E, CSD86311W1723, CSD86330Q3D, CSD86350Q5D, CSD87312Q3E, CSD87330Q3D