CSD75301W1015 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD75301W1015
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 1.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.7 nS
Cossⓘ - Capacitancia de salida: 67 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: WLP1.0X1.5
Búsqueda de reemplazo de CSD75301W1015 MOSFET
CSD75301W1015 Datasheet (PDF)
csd75301w1015.pdf

P-Channel Dual Common Source CICLON NexFET Power MOSFETs CSD75301W1015 Product Summary (Per Device) Features Dual P-ch MOSFETs VDS -20 V Common Source Configuration Qg 1.5 nCD2 G2 Qgd 0.3 nC Small Footprint 1.0 x 1.5 mm S S VGS= -1.8V 150 m Low Profile 0.65mm G1 D1 RDS(on) VGS=-2.5V 105 m Ultra Low Qg and Qgd VGS=-4
csd75208w1015.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75208W1015SLPS512 JULY 2014CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVDS Drain-to-Source Voltage 20 V Small Footprint 1 mm 1.5 mmQ
csd75205w1015.pdf

CSD75205W1015www.ti.com SLPS222B OCTOBER 2009 REVISED OCTOBER 2010P-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVDS Drain to Source Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 1.6 nC Small Footprint 1mm 1.5mmQgd Gate Charge Gate to Drain 0.4 nCVGS = 1.8V 145 m Gate-Source Voltage Clamp
csd75211w1723.pdf

CSD75211W1723www.ti.com SLPS250A MAY 2010REVISED AUGUST 2011Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75211W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage -20 V Dual P-Ch MOSFETsQg Gate Charge Total (-4.5V) 4.5 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.9 nC Small Footprint 1.7 mm 2.3 mmVGS = -1.8V 50 m
Otros transistores... CSD25481F4 , CSD25483F4 , CSD25484F4 , CSD75204W15 , CSD75205W1015 , CSD75207W15 , CSD75208W1015 , CSD75211W1723 , AON7506 , CSD83325L , CSD85301Q2 , CSD85312Q3E , CSD86311W1723 , CSD86330Q3D , CSD86350Q5D , CSD87312Q3E , CSD87330Q3D .
History: 2SK4197FS | VS4603GPMT
History: 2SK4197FS | VS4603GPMT



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
647 transistor | d525 transistor | 2sc1583 | g60t60an3h | mosfet k8a50d | sl100 transistor | d2499 datasheet | 6r190p6 datasheet