CSD75301W1015 MOSFET. Datasheet pdf. Equivalent
Type Designator: CSD75301W1015
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 1.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.5 nC
trⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 67 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: WLP1.0X1.5
CSD75301W1015 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSD75301W1015 Datasheet (PDF)
csd75301w1015.pdf
P-Channel Dual Common Source CICLON NexFET Power MOSFETs CSD75301W1015 Product Summary (Per Device) Features Dual P-ch MOSFETs VDS -20 V Common Source Configuration Qg 1.5 nCD2 G2 Qgd 0.3 nC Small Footprint 1.0 x 1.5 mm S S VGS= -1.8V 150 m Low Profile 0.65mm G1 D1 RDS(on) VGS=-2.5V 105 m Ultra Low Qg and Qgd VGS=-4
csd75208w1015.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75208W1015SLPS512 JULY 2014CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVDS Drain-to-Source Voltage 20 V Small Footprint 1 mm 1.5 mmQ
csd75205w1015.pdf
CSD75205W1015www.ti.com SLPS222B OCTOBER 2009 REVISED OCTOBER 2010P-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVDS Drain to Source Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 1.6 nC Small Footprint 1mm 1.5mmQgd Gate Charge Gate to Drain 0.4 nCVGS = 1.8V 145 m Gate-Source Voltage Clamp
csd75211w1723.pdf
CSD75211W1723www.ti.com SLPS250A MAY 2010REVISED AUGUST 2011Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75211W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage -20 V Dual P-Ch MOSFETsQg Gate Charge Total (-4.5V) 4.5 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.9 nC Small Footprint 1.7 mm 2.3 mmVGS = -1.8V 50 m
csd75207w15.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75207W15SLPS418A JUNE 2013 REVISED JUNE 2014CSD75207W15 Dual P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVD1D2 Drain-to-Drain Voltage 20 V Small Footprint 1.5-mm 1.5-mm
csd75204w15.pdf
CSD75204W15www.ti.com SLPS221A OCTOBER 2009REVISED OCTOBER 2010Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75204W151FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVD1D2 Drain to Drain Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 2.8 nC Small Footprint 1.5-mm 1.5-mmQgd Gate Charge Gate to Drain 0.6 nC Gate-Source
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APT47N60BCFG
History: APT47N60BCFG
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