NDT453N Todos los transistores

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NDT453N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDT453N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 35 nC

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Empaquetado / Estuche: SOT223

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NDT453N Datasheet (PDF)

5.1. ndt451an.pdf Size:276K _fairchild_semi

NDT453N
NDT453N

February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V effect transistors are produced using Fairchild's RDS(ON) = 0.05Ω @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini

5.2. ndt456p.pdf Size:99K _fairchild_semi

NDT453N
NDT453N

December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V effect transistors are produced using Fairchild's RDS(ON) = 0.045 Ω @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailo

 5.3. ndt454p.pdf Size:96K _fairchild_semi

NDT453N
NDT453N

June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features -5.9A, -30V. RDS(ON) = 0.05Ω @ VGS = -10V Power SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07Ω @ VGS = -6V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.09Ω @ VGS = -4.5V. density, DMOS technology. This very high density process is

5.4. ndt452ap.pdf Size:97K _fairchild_semi

NDT453N
NDT453N

June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1Ω @ VGS = -4.5V. high cell density, DMOS technology. This very high density process is especially tailored to minimiz

Otros transistores... NDT2955 , NDT3055 , NDT3055L , NDT410EL , NDT451AN , NDT451N , NDT452AP , NDT452P , IRF640 , NDT454P , NDT455N , NDT456P , OM11N55SA , OM11N60SA , OM1N100SA , OM1N100ST , OM3N100SA .

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