NDT453N Datasheet and Replacement

February 2009 NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to mini

December 1998 NDT456PP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT P-Channel enhancement mode power field-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 Veffect transistors are produced using Fairchild's RDS(ON) = 0.045 @ VGS = -4.5 V.proprietary, high cell density, DMOS technology. Thisvery high density process is especially tailo

June 1996 NDT454PP-Channel Enhancement Mode Field Effect TransistorGeneral Description Features-5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10VPower SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6Vtransistors are produced using Fairchild's proprietary, high cellRDS(ON) = 0.09 @ VGS = -4.5V.density, DMOS technology. This very high density process is

June 1996 NDT452APP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V.high cell density, DMOS technology. This very high densityprocess is especially tailored to minimiz

NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d

NDT454PP-Channel Enhancement Mode Field Effect TransistorGeneral Description Features-5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10VPower SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6Vtransistors are produced using ON Semiconductor's RDS(ON) = 0.09 @ VGS = -4.5V.proprietary, high cell density, DMOS technology. This very high density process is e

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDT451ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA

NDT456Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S

NDT454Pwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Load S

NDT452AP-NLwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Lo