NDT453N datasheet, подбор замены

 9.1. Size:276K  fairchild semi
 ndt451an.pdf 

February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V effect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini

 9.2. Size:99K  fairchild semi
 ndt456p.pdf 

December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V effect transistors are produced using Fairchild's RDS(ON) = 0.045 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailo

 9.3. Size:96K  fairchild semi
 ndt454p.pdf 

June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features -5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V Power SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.09 @ VGS = -4.5V. density, DMOS technology. This very high density process is

 9.4. Size:97K  fairchild semi
 ndt452ap.pdf 

June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V. high cell density, DMOS technology. This very high density process is especially tailored to minimiz

 9.5. Size:456K  onsemi
 ndt451an.pdf 

NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V effect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d

 9.6. Size:463K  onsemi
 ndt454p.pdf 

NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features -5.9A, -30V. RDS(ON) = 0.05 @ VGS = -10V Power SOT P-Channel enhancement mode power field effect RDS(ON) = 0.07 @ VGS = -6V transistors are produced using ON Semiconductor's RDS(ON) = 0.09 @ VGS = -4.5V. proprietary, high cell density, DMOS technology. This very high density process is e

 9.7. Size:213K  onsemi
 ndt452ap.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.8. Size:918K  cn vbsemi
 ndt451an.pdf 

NDT451AN www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARA

 9.9. Size:849K  cn vbsemi
 ndt456p.pdf 

NDT456P www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S

 9.10. Size:850K  cn vbsemi
 ndt454p.pdf 

NDT454P www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S

 9.11. Size:1612K  cn vbsemi
 ndt452ap-nl.pdf 

NDT452AP-NL www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Lo