KML0D4P20E Todos los transistores

 

KML0D4P20E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KML0D4P20E

Código: C3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.21 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 6 V

Corriente continua de drenaje (Id): 0.35 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 1.5 nC

Tiempo de elevación (tr): 3 nS

Conductancia de drenaje-sustrato (Cd): 16 pF

Resistencia drenaje-fuente RDS(on): 1.2 Ohm

Empaquetado / Estuche: ESM

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KML0D4P20E Datasheet (PDF)

1.1. kml0d4p20e.pdf Size:783K _update_mosfet

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES ·VDSS= -20V, ID= -0.35A ·Drain-Soure ON Resistance : RDS(ON)=1.2Ω @ VGS= -4.5V : RDS(ON)=1.6Ω @ VGS= -2.5V : RDS(ON)=2.7Ω @ VGS= -1.8V ·ESD Protection diode. MAXIMUM RATING (Ta=25℃) CHA

4.1. kml0d4n20e.pdf Size:771K _update_mosfet

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES ·VDSS=20V, ID=0.4A ·Drain-Soure ON Resistance : RDS(ON)=0.70Ω @ VGS=4.5V : RDS(ON)=0.85Ω @ VGS=2.5V : RDS(ON)=1.25Ω @ VGS=1.8V ·Super High Dense Cell Design MAXIMUM RATING (Ta=25℃) CHAR

4.2. kml0d4n20v.pdf Size:377K _kec

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4N20V TECHNICAL DATA N-Ch Trench MOSFET General Description It’s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. E B DIM MILLIMETERS 2 FEATURES _ A 1.2 +0.05 _ B 0.8 +0.05 ·VDSS=20V, ID=0.4A 1 3 _ C 0.5 + 0.05 ·Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 : RDS(ON)=0.70Ω @ VGS=4.5V _ G 0.8 +

 4.3. kml0d4n20tv.pdf Size:743K _kec

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4N20TV TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered E Systems and Level-Shifter. B 2 DIM MILLIMETERS FEATURES _ 1 A 1.2 +0.05 3 _ B 0.8 +0.05 ·VDSS=20V, ID=0.4A C 0.34 Max ·Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 : RDS(ON)=0.70Ω @ VGS=4.5V _ F 0.8 + 0.05

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