All MOSFET. KML0D4P20E Datasheet

 

KML0D4P20E MOSFET. Datasheet pdf. Equivalent

Type Designator: KML0D4P20E

SMD Transistor Code: C3

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.21 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 0.35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.5 nC

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 16 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: ESM

KML0D4P20E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

KML0D4P20E Datasheet (PDF)

1.1. kml0d4p20e.pdf Size:783K _update_mosfet

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES ·VDSS= -20V, ID= -0.35A ·Drain-Soure ON Resistance : RDS(ON)=1.2Ω @ VGS= -4.5V : RDS(ON)=1.6Ω @ VGS= -2.5V : RDS(ON)=2.7Ω @ VGS= -1.8V ·ESD Protection diode. MAXIMUM RATING (Ta=25℃) CHA

4.1. kml0d4n20e.pdf Size:771K _update_mosfet

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES ·VDSS=20V, ID=0.4A ·Drain-Soure ON Resistance : RDS(ON)=0.70Ω @ VGS=4.5V : RDS(ON)=0.85Ω @ VGS=2.5V : RDS(ON)=1.25Ω @ VGS=1.8V ·Super High Dense Cell Design MAXIMUM RATING (Ta=25℃) CHAR

4.2. kml0d4n20v.pdf Size:377K _kec

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4N20V TECHNICAL DATA N-Ch Trench MOSFET General Description It’s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. E B DIM MILLIMETERS 2 FEATURES _ A 1.2 +0.05 _ B 0.8 +0.05 ·VDSS=20V, ID=0.4A 1 3 _ C 0.5 + 0.05 ·Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 : RDS(ON)=0.70Ω @ VGS=4.5V _ G 0.8 +

 4.3. kml0d4n20tv.pdf Size:743K _kec

KML0D4P20E
KML0D4P20E

SEMICONDUCTOR KML0D4N20TV TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered E Systems and Level-Shifter. B 2 DIM MILLIMETERS FEATURES _ 1 A 1.2 +0.05 3 _ B 0.8 +0.05 ·VDSS=20V, ID=0.4A C 0.34 Max ·Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 : RDS(ON)=0.70Ω @ VGS=4.5V _ F 0.8 + 0.05

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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