PHB2N50E Todos los transistores

 

PHB2N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHB2N50E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT404

 Búsqueda de reemplazo de MOSFET PHB2N50E

 

Principales características: PHB2N50E

 ..1. Size:73K  philips
 php2n50e phb2n50e phd2n50e.pdf pdf_icon

PHB2N50E

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) 5 s GENERAL DESCRIPTION N-channe

 7.1. Size:59K  philips
 phb2n50 1.pdf pdf_icon

PHB2N50E

Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dis

 9.1. Size:75K  philips
 php2n60e phb2n60e phd2n60e.pdf pdf_icon

PHB2N50E

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) 6 s GENERAL DESCRIPTION N-chan

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