PHB2N50E Datasheet and Replacement. Cross Reference Search

PHB2N50E Datasheet (PDF)

..1. Size:73K philips
php2n50e phb2n50e phd2n50e.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe

7.1. Size:59K philips
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Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 500 Vmounting featuring high avalanche ID Drain current (DC) 2 Aenergy capability, stable off-state Ptot Total power dis

9.1. Size:75K philips
php2n60e phb2n60e phd2n60e.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 Ag Low thermal resistanceRDS(ON) 6 sGENERAL DESCRIPTIONN-chan

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .