PHB2N50E Spec and Replacement
Type Designator: PHB2N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT404
PHB2N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB2N50E Specs
php2n50e phb2n50e phd2n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) 5 s GENERAL DESCRIPTION N-channe... See More ⇒
phb2n50 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dis... See More ⇒
php2n60e phb2n60e phd2n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) 6 s GENERAL DESCRIPTION N-chan... See More ⇒
Detailed specifications: OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , PHB24N03LT , 8205A , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E , PHB42N03LT , PHB44N06LT , PHB45N03LT .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

