PHB50N03LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHB50N03LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Paquete / Cubierta: SOT404

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PHB50N03LT Datasheet (PDF)

..1. Size:111K philips
phb50n03lt phd50n03lt php50n03lt 7.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve

6.1. Size:52K philips
phb50n03t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB50N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 50 Atrench technology. The devic

7.1. Size:56K philips
phb50n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 50 Atrench technology the devic

7.2. Size:55K philips
phb50n06lt.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 50 Athe device fea

Otros transistores... PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E , PHB42N03LT , PHB44N06LT , PHB45N03LT , PHB4N60E , IRF1010E , PHB50N06LT , PHB55N03LT , PHB60N06LT , PHB65N06LT , PHB69N03LT , PHB6N50E , PHB6N60E , PHB6ND50E .

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