PHB50N03LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB50N03LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 86
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 48
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
SOT404
PHB50N03LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB50N03LT
Datasheet (PDF)
..1. Size:111K philips
phb50n03lt phd50n03lt php50n03lt 7.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve
6.1. Size:52K philips
phb50n03t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB50N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 50 Atrench technology. The devic
7.1. Size:56K philips
phb50n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB50N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 50 Atrench technology the devic
7.2. Size:55K philips
phb50n06lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB50N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 50 Athe device fea
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