Справочник MOSFET. PHB50N03LT

 

PHB50N03LT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PHB50N03LT
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 86 W
   Предельно допустимое напряжение сток-исток |Uds|: 25 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 48 A
   Максимальная температура канала (Tj): 150 °C
   Сопротивление сток-исток открытого транзистора (Rds): 0.021 Ohm
   Тип корпуса: SOT404

 Аналог (замена) для PHB50N03LT

 

 

PHB50N03LT Datasheet (PDF)

 ..1. Size:111K  philips
 phb50n03lt phd50n03lt php50n03lt 7.pdf

PHB50N03LT PHB50N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve

 6.1. Size:52K  philips
 phb50n03t 1.pdf

PHB50N03LT PHB50N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB50N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 50 Atrench technology. The devic

 7.1. Size:56K  philips
 phb50n06t 1.pdf

PHB50N03LT PHB50N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 50 Atrench technology the devic

 7.2. Size:55K  philips
 phb50n06lt.pdf

PHB50N03LT PHB50N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 50 Athe device fea

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