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L1N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L1N60I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.9 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 11.5 Ohm
   Paquete / Cubierta: TO-251
 

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L1N60I Datasheet (PDF)

 ..1. Size:212K  lrc
 l1n60a l1n60f l1n60i.pdf pdf_icon

L1N60I

LESHAN RADIO COMPANY, LTD.L1N601.0 Amps, 600 Volts N-CHANNEL MOSFET 123TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche 23 TO-220F-3Lcharacteristics. This power MOSFET is usually used at high speed sw

 9.1. Size:415K  lrc
 l1n60.pdf pdf_icon

L1N60I

LESHAN RADIO COMPANY, LTD.Power MOSFETL1N601.2 Amps, 600 Volts NChannelThe LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1TO- 251characteristics. This power MOSFET is usually used at high speed switching applications in power suppli

Otros transistores... KW306 , KX020N06 , KX7N10L , KXP20N15 , KXU03N25 , KXU05N25 , L1N60A , L1N60F , IRF640 , L2N60D , L2N60F , L2N60I , L2N60P , L2N7002DMT1G , L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G .

History: IRF510STRRPBF | SMK1430DI | SMK1430F | KU390N10P | 2SK1487 | NDT4N65 | IRF830B

 

 
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