L1N60I Specs and Replacement

Type Designator: L1N60I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.9 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm

Package: TO-251

L1N60I substitution

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L1N60I datasheet

 ..1. Size:212K  lrc
 l1n60a l1n60f l1n60i.pdf pdf_icon

L1N60I

LESHAN RADIO COMPANY, LTD. L1N60 1.0 Amps, 600 Volts N-CHANNEL MOSFET 1 2 3 TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1 charge, low on-state resistance and have a high rugged avalanche 2 3 TO-220F-3L characteristics. This power MOSFET is usually used at high speed sw... See More ⇒

 9.1. Size:415K  lrc
 l1n60.pdf pdf_icon

L1N60I

LESHAN RADIO COMPANY, LTD. Power MOSFET L1N60 1.2 Amps, 600 Volts N Channel The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1 TO- 251 characteristics. This power MOSFET is usually used at high speed switching applications in power suppli... See More ⇒

Detailed specifications: KW306, KX020N06, KX7N10L, KXP20N15, KXU03N25, KXU05N25, L1N60A, L1N60F, IRFZ44, L2N60D, L2N60F, L2N60I, L2N60P, L2N7002DMT1G, L2N7002DW1T1G, L2N7002LT1G, L2N7002WT1G

Keywords - L1N60I MOSFET specs

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