All MOSFET. L1N60I Datasheet

 

L1N60I Datasheet and Replacement


   Type Designator: L1N60I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.9 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: TO-251
 

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L1N60I Datasheet (PDF)

 ..1. Size:212K  lrc
 l1n60a l1n60f l1n60i.pdf pdf_icon

L1N60I

LESHAN RADIO COMPANY, LTD.L1N601.0 Amps, 600 Volts N-CHANNEL MOSFET 123TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche 23 TO-220F-3Lcharacteristics. This power MOSFET is usually used at high speed sw

 9.1. Size:415K  lrc
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L1N60I

LESHAN RADIO COMPANY, LTD.Power MOSFETL1N601.2 Amps, 600 Volts NChannelThe LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1TO- 251characteristics. This power MOSFET is usually used at high speed switching applications in power suppli

Datasheet: KW306 , KX020N06 , KX7N10L , KXP20N15 , KXU03N25 , KXU05N25 , L1N60A , L1N60F , IRF640 , L2N60D , L2N60F , L2N60I , L2N60P , L2N7002DMT1G , L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G .

History: NVB6410AN | NVB5860N | NVA7002NT1G | TK3R3A06PL | CS16N65FA9H | SI2307 | KU2310Q

Keywords - L1N60I MOSFET datasheet

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