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L2N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2N60I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-251
 

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L2N60I Datasheet (PDF)

 ..1. Size:786K  lrc
 l2n60d l2n60f l2n60i l2n60p.pdf pdf_icon

L2N60I

LESHAN RADIO COMPANY, LTD.L2N60600V N-Channel MOSFET 2 DESCRIPTION 1 3

 9.1. Size:220K  blue-rocket-elect
 brl2n60.pdf pdf_icon

L2N60I

BRL2N60(CS2N60L) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 9.2. Size:395K  lrc
 l2n600.pdf pdf_icon

L2N60I

LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage

 9.3. Size:1149K  belling
 bl2n60-p bl2n60-a bl2n60-u bl2n60-d.pdf pdf_icon

L2N60I

BL2N60 Power MOSFET 1Description Step-Down Converter BL2N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para

MOSTRAR MÁS

Otros transistores... KXP20N15 , KXU03N25 , KXU05N25 , L1N60A , L1N60F , L1N60I , L2N60D , L2N60F , IRFP260N , L2N60P , L2N7002DMT1G , L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G , L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G .

History: IPD031N03L

 

 
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