L2N60I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2N60I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 30 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de L2N60I MOSFET
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L2N60I datasheet
l2n60d l2n60f l2n60i l2n60p.pdf
LESHAN RADIO COMPANY, LTD. L2N60 600V N-Channel MOSFET 2 DESCRIPTION 1 3
brl2n60.pdf
BRL2N60(CS2N60L) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
l2n600.pdf
LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage
bl2n60-p bl2n60-a bl2n60-u bl2n60-d.pdf
BL2N60 Power MOSFET 1 Description Step-Down Converter BL2N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para
Otros transistores... KXP20N15, KXU03N25, KXU05N25, L1N60A, L1N60F, L1N60I, L2N60D, L2N60F, IRLZ44N, L2N60P, L2N7002DMT1G, L2N7002DW1T1G, L2N7002LT1G, L2N7002WT1G, L2SK3018WT1G, L2SK3019LT1G, LDN9926ET1G
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