L2N60I MOSFET. Datasheet pdf. Equivalent
Type Designator: L2N60I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.3 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-251
L2N60I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
L2N60I Datasheet (PDF)
l2n60d l2n60f l2n60i l2n60p.pdf
LESHAN RADIO COMPANY, LTD.L2N60600V N-Channel MOSFET 2 DESCRIPTION 1 3
brl2n60.pdf
BRL2N60(CS2N60L) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
l2n600.pdf
LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage
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